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1. product profile 1.1 general description npn silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter sot343f package. 1.2 features and benefits ? low noise high gain microwave transistor ? noise figure (nf) = 0.7 db at 5.8 ghz ? high maximum stable gain 27 db at 1.8 ghz ? 110 ghz f t silicon germanium technology 1.3 applications ? 2nd lna stage and mixer stage in dbs lnb?s ? satellite radio ? low noise amplifiers for microwave communications systems ? wlan and cdma applications ? analog/digital cordless applications ? ka band oscillators (dro?s) 1.4 quick reference data bfu725f/n1 npn wideband silicon germ anium rf transistor rev. 2 ? 3 november 2011 product data sheet caution this device is sensitive to electrostatic di scharge (esd). observe precautions for handling electrostatic sensitive devices. such precautions are described in the ansi/esd s20.20 , iec/st 61340-5 , jesd625-a or equivalent standards. table 1. quick reference data symbol parameter conditions min typ max unit v cbo collector-base voltage open emitter - - 10 v v ceo collector-emitter voltage open base - - 2.8 v v ebo emitter-base voltage open collector - - 1.0 v i c collector current - 25 40 ma p tot total power dissipation t sp ? 90 ?c [1] - - 136 mw h fe dc current gain i c =10ma; v ce =2v; t j =25 ?c 160 280 400
bfu725f_n1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 2 ? 3 november 2011 2 of 12 nxp semiconductors bfu725f/n1 npn wideband silicon germanium rf transistor [1] t sp is the temperature at the solder point of the emitter lead. [2] g p(max) is the maximum power gain, if k > 1. if k < 1 then g p(max) = maximum stable gain (msg). 2. pinning information 3. ordering information 4. marking c cbs collector-base capacitance v cb =2v; f=1mhz - 70 - ff f t transition frequency i c =25ma; v ce =2v; f=2ghz; t amb =25 ?c -55- ghz g p(max) maximum power gain i c =25ma; v ce =2v; f=5.8ghz; t amb =25 ?c [2] -18- db nf noise figure i c =5ma; v ce =2v; f=5.8ghz; ? s = ? opt ; t amb =25 ? c -0.7- db table 1. quick reference data ?continued symbol parameter conditions min typ max unit table 2. discrete pinning pin description simplified outline graphic symbol 1e m i t t e r 2b a s e 3e m i t t e r 4 collector 12 34 mbb159 4 1, 3 2 table 3. ordering information type number package name description version bfu725f/n1 - plastic surface-mounted flat pack package; reverse pinning; 4 leads sot343f table 4. marking type number marking description bfu725f/n1 b7* * = p : made in hong kong * = t : made in malaysia * = w : made in china
bfu725f_n1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 2 ? 3 november 2011 3 of 12 nxp semiconductors bfu725f/n1 npn wideband silicon germanium rf transistor 5. limiting values [1] t sp is the temperature at the solder point of the emitter lead. 6. thermal characteristics table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v cbo collector-base voltage open emitter - 10 v v ceo collector-emitter voltage open base - 2.8 v v ebo emitter-base voltage open collector - 1.0 v i c collector current - 40 ma p tot total power dissipation t sp ? 90 ?c [1] - 136 mw t stg storage temperature ? 65 +150 ?c t j junction temperature - 150 ?c table 6. thermal characteristics symbol parameter conditions typ unit r th(j-sp) thermal resistance from junction to solder point 440 k/w fig 1. power derating curve t sp (c) 0 160 120 40 80 001aah424 100 50 150 200 p tot (mw) 0
bfu725f_n1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 2 ? 3 november 2011 4 of 12 nxp semiconductors bfu725f/n1 npn wideband silicon germanium rf transistor 7. characteristics table 7. characteristics t j =25 ? c unless otherwise specified. symbol parameter conditions min typ max unit v (br)cbo collector-base breakdown voltage i c =2.5 ? a; i e =0ma 10--v v (br)ceo collector-emitter breakdown voltage i c =1ma; i b =0ma 2.8--v i c collector current - 2540ma i cbo collector-base cut-off current i e =0ma; v cb =4.5v - - 100 na h fe dc current gain i c =10ma; v ce = 2 v 160 280 400 c ces collector-emitter capacitance v cb = 2 v; f = 1 mhz - 268 - ff c ebs emitter-base capacitance v eb = 0.5 v; f = 1 mhz - 400 - ff c cbs collector-base capacitance v cb = 2 v; f = 1 mhz - 70 - ff f t transition frequency i c =25ma; v ce =2v; f=2ghz; t amb =25 ? c-5 5-g h z g p(max) maximum power gain i c =25ma; v ce =2v; t amb =25 ?c [1] f = 1.5 ghz - 28 - db f = 1.8 ghz - 27 - db f = 2.4 ghz - 25.5 - db f = 5.8 ghz - 18 - db f = 12 ghz - 13 - db ?s 21 ? 2 insertion power gain i c =25ma; v ce =2v; t amb =25 ?c f = 1.5 ghz - 26.7 - db f = 1.8 ghz - 25.4 - db f = 2.4 ghz - 23 - db f = 5.8 ghz - 16 - db f = 12 ghz - 9.3 - db nf noise figure i c =5ma; v ce =2v; ? s = ? opt ; t amb =25 ? c f = 1.5 ghz - 0.42 - db f = 1.8 ghz - 0.43 - db f = 2.4 ghz - 0.47 - db f=5.8ghz - 0.7 - db f = 12 ghz - 1.1 - db g ass associated gain i c =5ma; v ce =2v; ? s = ? opt ; t amb =25 ? c f = 1.5 ghz - 24 - db f = 1.8 ghz - 22 - db f = 2.4 ghz - 20 - db f = 5.8 ghz - 13.5 - db f = 12 ghz - 10 - db
bfu725f_n1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 2 ? 3 november 2011 5 of 12 nxp semiconductors bfu725f/n1 npn wideband silicon germanium rf transistor [1] g p(max) is the maximum power gain, if k ? 1. if k ? 1 then g p(max) =msg. p l(1db) output power at 1 db gain compression i c =25ma; v ce =2v; z s =z l =50 ? ; t amb =25 ?c f=1.5ghz - 8.5 - dbm f=1.8ghz - 9 - dbm f=2.4ghz - 8.5 - dbm f=5.8ghz - 8 - dbm ip3 third-order intercept point i c =25ma; v ce =2v; z s =z l =50 ? ; t amb =25 ?c; f 2 =f 1 + 1 mhz f 1 = 1.5 ghz - 17 - dbm f 1 = 1.8 ghz - 17 - dbm f 1 = 2.4 ghz - 17 - dbm f 1 = 5.8 ghz - 19 - dbm table 7. characteristics ?continued t j =25 ? c unless otherwise specified. symbol parameter conditions min typ max unit t amb =25 ? c. (1) i b =110 ? a (2) i b = 100 ? a (3) i b =90 ? a (4) i b =80 ? a (5) i b =70 ? a (6) i b =60 ? a (7) i b =50 ? a (8) i b =40 ? a (9) i b =30 ? a (10) i b =20 ? a (11) i b =10 ? a t amb =25 ? c. (1) v ce =1v (2) v ce = 1.5 v (3) v ce =2v fig 2. collector current as a function of collector-emitter voltage; typical values fig 3. dc current gain a function of collector current; typical values v ce (v) 0 2.5 0.5 2.0 3.0 1.51.0 3.5 001aak271 10 20 30 i c (ma) 0 (1) (2) (3) (4) (5) (6) (7) (8) (9) (10) (11) 001aak272 i c (ma) 030 20 10 300 250 350 400 h fe 200 (1) (2) (3)
bfu725f_n1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 2 ? 3 november 2011 6 of 12 nxp semiconductors bfu725f/n1 npn wideband silicon germanium rf transistor f=1mhz, t amb =25 ? c. v ce = 2 v; f = 2 ghz; t amb =25 ? c. fig 4. collector-base capacitance as a function of collector-base voltage; typical values fig 5. transition frequency as a function of collector current; typical values v ce =2v; t amb =25 ? c. (1) f = 1.5 ghz (2) f = 1.8 ghz (3) f = 2.4 ghz (4) f = 5.8 ghz (5) f = 12 ghz fig 6. gain as a function of collector current; typical value 001aah427 v cb (v) 012 8 4 80 40 120 160 c cbs (ff) 0 i c (ma) 040 30 10 20 001aak273 20 40 60 f t (ghz) 0 001aah429 i c (ma) 10 ?1 10 2 10 1 10 10 2 g (db) 1 (1) (2) (3) (4) (5) msg msg g max g max
bfu725f_n1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 2 ? 3 november 2011 7 of 12 nxp semiconductors bfu725f/n1 npn wideband silicon germanium rf transistor v ce =2v; i c =5ma; t amb =25 ? c. v ce =2v; i c =25ma; t amb =25 ? c. fig 7. gain as a function of frequency; typical values fig 8. gain as a function of frequency; typical values v ce =2v; t amb =25 ? c. (1) f = 12 ghz (2) f = 5.8 ghz (3) f = 2.4 ghz (4) f = 1.8 ghz (5) f = 1.5 ghz v ce =2v; t amb =25 ? c. (1) i c =25ma (2) i c =5ma fig 9. minimum noise figure as a function of collector current; typical values fig 10. minimum noise figu re as a function of frequency; typical values 001aah430 20 30 10 40 50 g (db) 0 f (ghz) 10 ?2 10 2 10 10 ?1 1 msg is21i 2 msg g p(max) 001aah431 20 30 10 40 50 g (db) 0 f (ghz) 10 ?2 10 2 10 10 ?1 1 msg msg is21i 2 g p(max) 001aah432 i c (ma) 030 20 10 0.8 1.2 0.4 1.6 2.0 nf min (db) 0 (3) (4) (5) (1) (2) f (ghz) 016 12 48 001aah433 0.8 1.2 0.4 1.6 2.0 nf min (db) 0 (1) (2)
bfu725f_n1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 2 ? 3 november 2011 8 of 12 nxp semiconductors bfu725f/n1 npn wideband silicon germanium rf transistor 8. package outline fig 11. package outline sot343f references outline version european projection issue date iec jedec jeita sot343f sot343f 05-07-12 06-03-16 unit a max mm 0.4 0.3 0.75 0.65 0.7 0.5 2.2 1.8 0.25 0.10 1.35 1.15 0.48 0.38 2.2 2.0 b p dimensions (mm are the original dimensions) plastic surface-mounted flat pack package; reverse pinning; 4 leads b 1 c d e e e 1 h e 1.151.3 l p w y 0.10.2 0 1 2 mm scale detail x l p c a e x h e d a y b p b 1 e 1 e wa m wa m 1 2 34
bfu725f_n1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 2 ? 3 november 2011 9 of 12 nxp semiconductors bfu725f/n1 npn wideband silicon germanium rf transistor 9. abbreviations 10. revision history table 8. abbreviations acronym description cdma code division multiple access dbs direct broadcast satellite dc direct current dro dielectric resonator oscillator lna low noise amplifier lnb low noise block ka kurtz above npn negative-positive-negative rf radio frequency wlan wireless local area network table 9. revision history document id release date data sheet status change notice supersedes bfu725f_n1 v.2 20111103 product data sheet - bfu725f_n1 v.1 modifications: ? table 1 on page 1 : the maximum value for v ebo has been changed to 1.0 v. ? table 5 on page 3 : the maximum value for v ebo has been changed to 1.0 v. bfu725f_n1 v.1 20090713 product data sheet - -
bfu725f_n1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 2 ? 3 november 2011 10 of 12 nxp semiconductors bfu725f/n1 npn wideband silicon germanium rf transistor 11. legal information 11.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 11.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 11.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from competent authorities. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification.
bfu725f_n1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 2 ? 3 november 2011 11 of 12 nxp semiconductors bfu725f/n1 npn wideband silicon germanium rf transistor quick reference data ? the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not comple te, exhaustive or legally binding. non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive app lications beyond nxp semiconductors? standard warranty and nxp semiconduct ors? product specifications. 11.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 12. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors bfu725f/n1 npn wideband silicon germanium rf transistor ? nxp b.v. 2011. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 3 november 2011 document identifier: bfu725f_n1 please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 13. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 thermal characteristics . . . . . . . . . . . . . . . . . . 3 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 8 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 9 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 10 revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 11 legal information. . . . . . . . . . . . . . . . . . . . . . . 10 11.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 11.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 11.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 11.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12 contact information. . . . . . . . . . . . . . . . . . . . . 11 13 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

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